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Product Type: Insulated - Gate Bipolar Transistor (IGBT) Module
Model: SKM300GB124D
Manufacturer: Semikron (a well - known brand in power electronics)
Collector - Emitter Voltage (VCES): 1200 V. This is the maximum voltage that can be applied between the collector and the emitter when the IGBT is in the off - state.
Continuous Collector Current (IC): 300 A. It represents the maximum current that the IGBT can continuously carry under specified operating conditions.
Gate - Emitter Voltage (VGES): ±20 V. The maximum voltage that can be applied between the gate and the emitter.
Forward Voltage Drop (VCE(sat)): Typically around 2 - 3 V at rated current. It is the voltage drop across the collector - emitter when the IGBT is in the on - state, which affects power dissipation.
Turn - on Time (ton): Usually in the range of a few hundred nanoseconds. It is the time taken for the IGBT to switch from the off - state to the on - state.
Turn - off Time (toff): Also in the range of a few hundred nanoseconds. It is the time taken for the IGBT to switch from the on - state to the off - state.
Junction - Case Thermal Resistance (Rth(j−c)): A low value, typically around 0.05 - 0.1 °C/W. It indicates how well heat can be transferred from the semiconductor junction to the module case.
Case - Sink Thermal Resistance (Rth(c−s)): This parameter depends on the heat - sink design and mounting. It represents the heat transfer resistance from the module case to the heat sink.
Package Type: A standard power - module package, which is designed for easy mounting on a heat sink and electrical connection in the circuit.
Dimensions: The physical dimensions are important for PCB layout and system integration. The exact values can be found in the product datasheet.
Product Type: Insulated - Gate Bipolar Transistor (IGBT) Module
Model: SKM300GB124D
Manufacturer: Semikron (a well - known brand in power electronics)
Collector - Emitter Voltage (VCES): 1200 V. This is the maximum voltage that can be applied between the collector and the emitter when the IGBT is in the off - state.
Continuous Collector Current (IC): 300 A. It represents the maximum current that the IGBT can continuously carry under specified operating conditions.
Gate - Emitter Voltage (VGES): ±20 V. The maximum voltage that can be applied between the gate and the emitter.
Forward Voltage Drop (VCE(sat)): Typically around 2 - 3 V at rated current. It is the voltage drop across the collector - emitter when the IGBT is in the on - state, which affects power dissipation.
Turn - on Time (ton): Usually in the range of a few hundred nanoseconds. It is the time taken for the IGBT to switch from the off - state to the on - state.
Turn - off Time (toff): Also in the range of a few hundred nanoseconds. It is the time taken for the IGBT to switch from the on - state to the off - state.
Junction - Case Thermal Resistance (Rth(j−c)): A low value, typically around 0.05 - 0.1 °C/W. It indicates how well heat can be transferred from the semiconductor junction to the module case.
Case - Sink Thermal Resistance (Rth(c−s)): This parameter depends on the heat - sink design and mounting. It represents the heat transfer resistance from the module case to the heat sink.
Package Type: A standard power - module package, which is designed for easy mounting on a heat sink and electrical connection in the circuit.
Dimensions: The physical dimensions are important for PCB layout and system integration. The exact values can be found in the product datasheet.
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